Process kits and related methods for processing chambers to facilitate deposition process adjustability

ABSTRACT

The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. provisional patentapplication Ser. No. 63/346,681, filed May 27, 2022, which is hereinincorporated by reference in its entirety.

BACKGROUND Field

The present disclosure relates to process kits and related methods forprocessing chambers to facilitate deposition process adjustability.

Description of the Related Art

Semiconductor substrates are processed for a wide variety ofapplications, including the fabrication of integrated devices andmicrodevices. During processing, various parameters can affect theuniformity of material deposited on the substrate. For example, thetemperature of the substrate and/or temperature(s) of processing chambercomponent(s) can affect deposition uniformity.

It can be difficult to adjust parameters (such as gas flow rates and gaspressures) for deposition uniformity. Rotation of the substrate, ifused, can exacerbate adjustment difficulties. Relatively low rotationspeeds, high pressures, and low flow rates can also exacerbateadjustment difficulties. Moreover, it can be difficult to cleancomponents of processing chambers.

Therefore, a need exists for improved process kits and related methodsthat facilitate adjusting process parameters and cleaning processingchamber components, such as at low rotation speeds, high pressures, andlow flow rates.

SUMMARY

The present disclosure relates to flow guides, process kits, and relatedmethods for processing chambers to facilitate deposition processadjustment.

In one implementation, a process kit for disposition in a processingchamber applicable for use in semiconductor manufacturing includes aplate having a first face and a second face opposing the first face. Theprocess kit includes a liner. The liner includes an annular section, andone or more ledges extending inwardly relative to the annular section.The one or more ledges are configured to support one or more outerregions of the second face of the plate. The liner includes one or moreinlet openings extending to an inner surface of the annular section on afirst side of the liner, and one or more outlet openings extending tothe inner surface of the annular section on a second side of the liner.

In one implementation, a processing chamber applicable for use insemiconductor manufacturing includes an internal volume, a plurality oflamps, and a substrate support disposed in the internal volume. Thesubstrate support includes a support face. The processing chamberincludes a window at least partially defining the internal volume. Thewindow includes a first face that is concave or flat, and a second facethat is convex, the second face facing the substrate support.

In one implementation, a method of processing substrates includesheating a substrate positioned on a substrate support in a chamber, andflowing one or more process gases over the substrate to form one or morelayers on the substrate. The flowing of the one or more process gasesover the substrate includes guiding the one or more process gasesbetween a plate and the substrate. The plate is supported on a liner todivide the processing volume into a lower portion and an upper portion.The method includes exhausting the one or more process gases, andflowing one or more cleaning gases through the upper portion while theplate is supported on the liner. The upper portion is between the plateand a window. The method includes exhausting the one or more cleaninggases.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofits scope, may admit to other equally effective embodiments.

FIG. 1 is a schematic side cross-sectional view of a processing chamber,according to one implementation.

FIG. 2 is a schematic block view of a control system for use within theprocessing chamber shown in FIG. 1 , according to one implementation.

FIG. 3 is a partial schematic side cross-sectional view of a processingchamber with a process kit in a processing position, according to oneimplementation.

FIG. 4 is a partial schematic side cross-sectional view of theprocessing chamber with the process kit (shown in FIG. 3 ) in a cleaningposition, according to one implementation.

FIG. 5 is a schematic partial perspective view of the process kit shownin FIGS. 3 and 4 , according to one implementation.

FIG. 6 is a schematic graphical view of a graph plotting temperatureversus an x-position, according to one implementation.

FIG. 7 is a partial schematic side cross-sectional view of a processingchamber with the process kit in a processing position, according to oneimplementation.

FIG. 8 is a partial schematic side cross-sectional view of theprocessing chamber with the process kit (shown in FIG. 7 ) in a cleaningposition, according to one implementation.

FIG. 9 is a partial schematic side cross-sectional view of the upperliner, according to one implementation.

FIG. 10 is a schematic top view of the process kit, according to oneimplementation.

FIG. 11 is a schematic side view of the lock extensions shown in FIG. 10, according to one implementation.

FIG. 12 is a schematic top plan view of the spatial configuration of theprocess kit disposed in the processing chamber, according to oneimplementation.

FIG. 13 is a partial schematic side cross-sectional view of a processingchamber with a process kit in a processing position, according to oneimplementation.

FIG. 14 is an enlarged cross-sectional view of the processing chambershown in FIG. 13 , according to one implementation.

FIG. 15 is a partial schematic side cross-sectional view of theprocessing chamber with the process kit (shown in FIG. 13 ) in acleaning position, according to one implementation.

FIG. 16 is an enlarged cross-sectional view of the processing chambershown in FIG. 15 , according to one implementation.

FIG. 17 is a schematic top view of the flow guide and the cover shown inFIG. 13 , according to one implementation.

FIG. 18 is a schematic bottom view of the flow guide and the cover shownin FIG. 13 , according to one implementation.

FIG. 19 is a schematic top view of the flow guide shown in FIG. 13 ,according to one implementation.

FIG. 20 is a schematic perspective view of a bottom of the flow guideshown in FIG. 13 , according to one implementation.

FIG. 21 is a schematic top view of the cover shown in FIG. 13 ,according to one implementation.

FIG. 22 is a schematic perspective view of a bottom of the cover shownin FIG. 13 , according to one implementation.

FIG. 23 is a partial schematic side cross-sectional view of a processingchamber with a process kit in a processing position, according to oneimplementation.

FIG. 24 is a partial schematic side cross-sectional view of theprocessing chamber with the process kit (shown in FIG. 23 ) in acleaning position, according to one implementation.

FIG. 25 is schematic top view of the processing kit shown in FIGS. 23and 24 , according to one implementation.

FIG. 26 is schematic top view of the processing kit shown in FIGS. 23and 24 , according to one implementation.

FIG. 27 is schematic top view of the processing kit shown in FIGS. 23and 24 , according to one implementation.

FIG. 28 is schematic top view of the processing kit shown in FIGS. 23and 24 , according to one implementation.

FIG. 29 is a schematic perspective view of the inner face of the middleplate shown in FIG. 26 , according to one implementation.

FIG. 30 is a schematic cross-sectional side view of the middle plateshown in FIG. 29 , according to one implementation.

FIG. 31 is a schematic cross-sectional side view of the middle plateshown in FIG. 29 , according to one implementation.

FIG. 32 is a schematic cross-sectional side view of the middle plateshown in FIG. 29 , according to one implementation.

FIG. 33 is a schematic side view of the middle plate shown in FIG. 26 ,according to one implementation.

FIG. 34 is a schematic block diagram view of a method of processingsubstrates, according to one implementation.

FIG. 35 is a partial schematic side cross-sectional view of a processingchamber with a process kit, according to one implementation.

FIG. 36 is a schematic perspective view of the process kit shown in FIG.35 , according to one implementation.

FIG. 37 is a partial schematic side cross-sectional view of theprocessing chamber shown in FIG. 35 , according to one implementation.

FIG. 38 is a schematic partial top view of the plate, the flow module,and the liner shown in FIGS. 35 and 37 , according to oneimplementation.

FIG. 39 is a schematic block diagram view of a method of processingsubstrates, according to one implementation.

FIG. 40 is a partial schematic side cross-sectional view of a processingchamber, according to one implementation.

FIG. 41 is a schematic enlarged view of the window shown in FIG. 40 ,according to one implementation.

FIG. 42 is a schematic top view of a flow guide, according to oneimplementation.

FIG. 43 is a schematic top view of a flow guide, according to oneimplementation.

FIG. 44 is a schematic bottom perspective view of the flow guide shownin FIG. 42 , according to one implementation.

FIG. 45 is a schematic partial side view of the flow guide shown in FIG.43 , according to one implementation.

FIG. 46 is a schematic partial side view of the flow guide shown in FIG.43 , according to one implementation.

FIG. 47 is a schematic top view of the flow guide shown in FIG. 42 ,according to one implementation.

FIG. 48 is a schematic top view of a flow guide, according to oneimplementation.

FIG. 49 is a schematic partial side view of the flow guide shown in FIG.42 in a processing chamber during a lowered condition, according to oneimplementation.

FIG. 50 is a schematic partial side view of the flow guide shown in FIG.49 during a raised condition, according to one implementation.

FIG. 51 is a schematic partial side view of the flow guide shown in FIG.49 in a tilted position, according to one implementation.

FIG. 52 is a schematic partial side view of the flow guide shown in FIG.49 in the tilted position, according to one implementation.

FIG. 53 is a schematic block diagram view of a method of processingsubstrates, according to one implementation.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

The present disclosure relates to process kits and related methods forprocessing chambers to facilitate deposition process adjustability.

FIG. 1 is a schematic side cross-sectional view of a processing chamber100, according to one implementation. The processing chamber 100 is adeposition chamber. In one embodiment, which can be combined with otherembodiments, the processing chamber 100 is an epitaxial depositionchamber. The processing chamber 100 is utilized to grow an epitaxialfilm on a substrate 102. The processing chamber 100 creates a cross-flowof precursors across a top surface 150 of the substrate 102.

The processing chamber 100 includes an upper body 156, a lower body 148disposed below the upper body 156, a flow module 112 disposed betweenthe upper body 156 and the lower body 148. The upper body 156, the flowmodule 112, and the lower body 148 form a chamber body. Disposed withinthe chamber body is a substrate support 106, an upper window 108 (suchas an upper dome), a lower window 110 (such as a lower dome), aplurality of upper lamps 141, and a plurality of lower lamps 143. Asshown, a controller 120 is in communication with the processing chamber100 and is used to control processes and methods, such as the operationsof the methods described herein.

The substrate support 106 is disposed between the upper window 108 andthe lower window 110. The substrate support 106 includes a support face123 that supports the substrate 102. The plurality of upper lamps 141are disposed between the upper window and a lid 154. The plurality ofupper lamps 141 form a portion of the upper lamp module 155. The lid 154may include a plurality of sensors (not shown) disposed therein formeasuring the temperature within the processing chamber 100. Theplurality of lower lamps 143 are disposed between the lower window 110and a floor 152. The plurality of lower lamps 143 form a portion of alower lamp module 145. The upper window 108 is an upper dome and isformed of an energy transmissive material, such as quartz. The lowerwindow 110 is a lower dome and is formed of an energy transmissivematerial, such as quartz.

A process volume 136 and a purge volume 138 are formed between the upperwindow 108 and the lower window 110. The process volume 136 and thepurge volume 138 are part of an internal volume defined at leastpartially by the upper window 108, the lower window 110, and the one ormore liners 163.

The internal volume has the substrate support 106 disposed therein. Thesubstrate support 106 includes a top surface on which the substrate 102is disposed. The substrate support 106 is attached to a shaft 118. Theshaft 118 is connected to a motion assembly 121. The motion assembly 121includes one or more actuators and/or adjustment devices that providemovement and/or adjustment for the shaft 118 and/or the substratesupport 106 within the processing volume 136.

The substrate support 106 may include lift pin holes 107 disposedtherein. The lift pin holes 107 are sized to accommodate a lift pin 132for lifting of the substrate 102 from the substrate support 106 eitherbefore or after a deposition process is performed. The lift pins 132 mayrest on lift pin stops 134 when the substrate support 106 is loweredfrom a process position to a transfer position.

The flow module 112 includes a plurality of gas inlets 114, a pluralityof purge gas inlets 164, and one or more gas exhaust outlets 116. Theplurality of gas inlets 114 and the plurality of purge gas inlets 164are disposed on the opposite side of the flow module 112 from the one ormore gas exhaust outlets 116. One or more flow guides 117 a, 117 b aredisposed below the plurality of gas inlets 114 and the one or more gasexhaust outlets 116. The one or more flow guides 117 a, 117 b aredisposed above the purge gas inlets 164. One or more liners 163 aredisposed on an inner surface of the flow module 112 and protects theflow module 112 from reactive gases used during deposition operationsand/or cleaning operations. The gas inlet(s) 114 and the purge gasinlet(s) 164 are each positioned to flow a gas parallel to the topsurface 150 of a substrate 102 disposed within the process volume 136.The gas inlet(s) 114 are fluidly connected to one or more process gassources 151 and one or more cleaning gas sources 153. The purge gasinlet(s) 164 are fluidly connected to one or more purge gas sources 162.The one or more gas exhaust outlets 116 are fluidly connected to anexhaust pump 157. One or more process gases supplied using the one ormore process gas sources 151 can include one or more reactive gases(such as one or more of silicon (Si), phosphorus (P), and/or germanium(Ge)) and/or one or more carrier gases (such as one or more of nitrogen(N₂) and/or hydrogen (H₂)). One or more purge gases supplied using theone or more purge gas sources 162 can include one or more inert gases(such as one or more of argon (Ar), helium (He), and/or nitrogen (N₂)).One or more cleaning gases supplied using the one or more cleaning gassources 153 can include one or more of hydrogen (H) and/or chlorine(Cl). In one embodiment, which can be combined with other embodiments,the one or more process gases include silicon phosphide (SiP) and/orphospine (PH₃), and the one or more cleaning gases include hydrochloricacid (HCl).

The one or more gas exhaust outlets 116 are further connected to orinclude an exhaust system 178. The exhaust system 178 fluidly connectsthe one or more gas exhaust outlets 116 and the exhaust pump 157. Theexhaust system 178 can assist in the controlled deposition of a layer onthe substrate 102. The exhaust system 178 is disposed on an oppositeside of the processing chamber 100 relative to the flow module 112.

FIG. 2 is a schematic block view of a control system 200 for use withinthe processing chamber 100 shown in FIG. 1 , according to oneimplementation. The controller 120 is configured to receive data orinput as sensor readings 502 from a plurality of sensors. The sensorscan include, for example, sensors that monitor growth of layer(s) on thesubstrate 102 and/or sensors that monitor growth or residue on innersurfaces of chamber components of the processing chamber 100 (such asinner surfaces of the upper window 108 and the one or more liners 163).The controller 120 is equipped with or in communication with a systemmodel 206 of the processing chamber 100. The system model 206 includes aheating model, a rotational position model, and a gas flow model. Thesystem model 206 is a program configured to estimate parameters (such asthe gas flow rate the gas pressure, the rotational position ofcomponent(s), and the heating profile) within the processing chamber 100throughout a deposition operation and/or a cleaning operation. Thecontroller 120 is further configured to store readings and calculations204.

The readings and calculations 204 include previous sensor readings 202,such as any previous sensor readings within the processing chamber 100.The readings and calculations 204 further include the stored calculatedvalues from after the sensor readings 202 are measured by the controller120 and run through the system model 206. Therefore, the controller 120is configured to both retrieve stored readings and calculations 204 aswell as save readings and calculations 204 for future use. Maintainingprevious readings and calculations enables the controller 120 to adjustthe system model 206 over time to reflect a more accurate version of theprocessing chamber 100.

The controller 120 includes a central processing unit (CPU), a memorycontaining instructions, and support circuits for the CPU. Thecontroller 120 controls various items directly, or via other computersand/or controllers. In one or more embodiments, the controller 120 iscommunicatively coupled to dedicated controllers, and the controller 120functions as a central controller.

The controller 120 is of any form of a general-purpose computerprocessor that is used in an industrial setting for controlling varioussubstrate processing chambers and equipment, and sub-processors thereonor therein. The memory, or non-transitory computer readable medium, isone or more of a readily available memory such as random access memory(RAM), dynamic random access memory (DRAM), static RAM (SRAM), andsynchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3,DDR4, LPDDR4, and the like)), read only memory (ROM), floppy disk, harddisk, flash drive, or any other form of digital storage, local orremote. The support circuits of the controller 120 are coupled to theCPU for supporting the CPU (a processor). The support circuits includecache, power supplies, clock circuits, input/output circuitry andsubsystems, and the like. Operational parameters (a pressure for processgas, a flow rate for process gas, and/or a rotational position of aprocess kit) and operations are stored in the memory as a softwareroutine that is executed or invoked to turn the controller 120 into aspecific purpose controller to control the operations of the variouschambers/modules described herein. The controller 120 is configured toconduct any of the operations described herein. The instructions storedon the memory, when executed, cause one or more of operations of method3400 (described below) to be conducted.

The various operations described herein (such as the operations of themethod 3400) can be conducted automatically using the controller 120, orcan be conducted automatically or manually with certain operationsconducted by a user.

In one or more embodiments, the controller 120 includes a mass storagedevice, an input control unit, and a display unit (not shown). Thecontroller 120 monitors the process gas, and purge gas flow. In one ormore embodiments, the controller 120 includes multiple controllers 120,such that the stored readings and calculations 204 and the system model206 are stored within a separate controller from the controller 120which operations the processing chamber 100. In one or more embodimentsall of the system model 206 and the stored readings and calculations 204are saved within the controller 120.

The controller 120 is configured to control the rotational position, theheating, and gas flow through the processing chamber 100 by providing anoutput to the controls 208 for the lamps, the gas flow, and the motionassembly 121. The controls 208 include controls for the upper lamps 141,the lower lamps 143, the process gas source 151, the purge gas source162, the motion assembly 121, and the exhaust pump 157.

The controller 120 is configured to adjust the output to the controls208 based off of the sensor readings 202, the system model 206, and thestored readings and calculations 204. The controller 120 includesembedded software and a compensation algorithm to calibratemeasurements. The controller 120 can include one or more machinelearning algorithms and/or artificial intelligence algorithms thatestimate optimized parameters for the deposition operation and/or thecleaning operations. The one or more machine learning algorithms and/orartificial intelligence algorithms can use, for example, a regressionmodel (such as a linear regression model) or a clustering technique toestimate optimized parameters. The algorithm can be unsupervised orsupervised.

FIG. 3 is a partial schematic side cross-sectional view of a processingchamber 300 with a process kit 310 in a processing position, accordingto one implementation. The processing chamber 300 is similar to theprocessing chamber 100 shown in FIG. 1 , and includes one or more of theaspects, features, components, properties, and/or operations thereof.

The process kit 310 is disposed in the process volume 136 of theinternal volume of the processing chamber 300. The process kit 310includes a flow guide 320. The flow guide 320 includes a middle plate321 disposed between the support face 123 and the upper lamps 141. Oneflange 331 (described below) of the process kit 310 is shown in FIG. 3 .The processing chamber 300 includes a lower liner 311 aligned at leastpartially below the substrate support 106 and an upper liner 312 alignedat least partially above the substrate support 106. A pre-heat ring 302is disposed outwardly of the substrate support 106. The pre-heat ring302 is supported on a ledge of the lower liner 311. A stop 304 includesa plurality of arms 305 a, 305 b that each include a lift pin stop onwhich the lift pins 132 can rest when lowered.

In the processing position shown in FIG. 3 , the process kit 310 is in alower position. In the processing position, the middle plate 321 issupported (e.g., rests) on a ledge 313 of the upper liner 312. In theprocessing position, the middle plate 321 effectively seals a lowerportion 136 a of the processing volume 136 from an upper portion 136 bof the processing volume 136. In one embodiment, which can be combinedwith other embodiments, the flanges 331, 332 (described below) arepartially supported on the substrate support 106 and partially supportedon the pre-heat ring 302 in the processing position. In such anembodiment, raising of the substrate support 106 can lift the processkit 310 away from the pre-heat ring 302.

One or more process gases P1 flow from the process gas inlets, into thelower portion 136 a, and over the substrate 102 to form (e.g.,epitaxially grow) one or more layers on the substrate 102 while thelamps 141, 143 heat the pre-heat ring 302 and the substrate 102. Afterflowing over the substrate 102, the one or more process gases P1 flowout of the internal volume through the one or more gas exhaust outlets116.

FIG. 4 is a partial schematic side cross-sectional view of theprocessing chamber 300 with the process kit 310 (shown in FIG. 3 ) in acleaning position, according to one implementation. In FIG. 4 , thecleaning position is a raised position relative to the processingposition shown in FIG. 3 .

In the cleaning position in FIG. 4 , the substrate 102 has been removedfrom the internal volume of the processing chamber 300. Using raising ofthe substrate support 106, the process kit 310 has been raised such thatthe middle plate 321 is raised to be at a gap from the ledge 313 of theupper liner 312 at both the first side 322 and the second side 323. Thegaps herein can be also referred to as openings. One or more cleaninggases C1 are supplied into the processing volume 136 through the gasinlets 114. At least part of the one or more cleaning gases C1 flowthrough the gap between the middle plate 321 and the ledge 313, and intothe upper portion 136 b. The one or more cleaning gases C1 flowing intothe upper portion 136 b facilitates cleaning inner surfaces of theprocessing chamber 300, such as inner surfaces of the upper liner 312and the upper window 108, and a surface of the middle plate 321 thatfaces the upper window 108. The one or more cleaning gases C1 clean aspace (e.g., the upper portion 136 b) that is between the middle plate321 and the upper window 108. The one or more cleaning gases C1 flowthrough the upper portion 136 b, through the gap on the opposing side ofthe processing chamber 300, and out of the internal volume through theone or more gas exhaust outlets 116.

FIG. 5 is a schematic partial perspective view of the process kit 310shown in FIGS. 3 and 4 , according to one implementation.

The middle plate 321 has a first side 322 (adjacent the gas inlets 114in FIGS. 3 and 4 ) and a second side 323 opposing the first side 322along a first direction D1. Each of the first side 322 and the secondside 323 is arcuate.

The process kit 310 incudes a first flange 331 extending outwardlyrelative to a third side 324 of the middle plate 321 and outwardlyrelative to an outer face 345 of the middle plate 321, and a secondflange 332 extending outwardly relative to a fourth side 325 of themiddle plate 321 and outwardly relative to the outer face 345 of themiddle plate 321. The fourth side 325 opposes the third side 324 along asecond direction D2 that intersects the first direction D1. In one ormore embodiments, the second direction D2 is perpendicular to the firstdirection D1. The third side 324 and the fourth side 325 are linear. InFIGS. 3 and 4 , the first and second flanges 331, 332 are supported atleast partially on the substrate support 106 such that raising andlowering of the substrate support 106 raises and lowers the process kit310. A rectangular flow opening 350 is defined between a first planarinner face 333 of the first flange 331 and a second planar inner face334 of the second flange 332. Each of the first flange 331 and thesecond flange 332 is semi-circular in shape. In one embodiment, whichcan be combined with other embodiments, the middle plate 231 is formedof quartz and the first and second flanges 331, 332 are each formed ofsilicon carbide (SiC). The rectangular flow opening 350 has a 3-Drectangular box shape such that the rectangular flow opening 350 has arectangular shape in each of the X-Y plane, the X-Z plane, and the Y-Zplane. When the process kit 310 is in the processing position, therectangular flow opening 350 is defined by one or more of the firstplanar inner face 333, the second planar inner face 334, an uppersurface of the substrate 102, an upper surface of the substrate support106, and/or an upper surface of the pre-heat ring 302.

The one or more process gases P1 flow through the rectangular flowopening 350 when flowing through the lower portion 136 a and over thesubstrate 102. The rectangular flow opening 350 facilitatesadjustability of process gases and cleaning gases (such as pressure andflow rate), to facilitate process uniformity and deposition uniformitywhile providing a path for cleaning gases to the upper portion 136 b. Asan example, the rectangular flow opening 350 facilitates using highpressures and low flow rates for the process gases and the cleaninggases. The rectangular flow opening 350 also facilitates mitigation ofthe effects that rotation of the substrate 102 has on process uniformityand film thickness uniformity during a deposition operation. As anexample, the rectangular flow opening mitigates or removes the effectsof gas vortex.

FIG. 6 is a schematic graphical view of a graph 600 plotting temperatureversus an x-position, according to one implementation. The temperaturerepresents a temperature of the substrate support 106 taken at a varietyof x-positions. The x-positions are taken along a diameter of thesubstrate support 106.

For a first profile 601, the process kit 310 was not included in theprocessing chamber. For a second profile 602, the process kit 310 wasincluded in the processing chamber. As shown by the second profile 602,process uniformity and mitigated effects of substrate rotation exhibithigher temperatures for the substrate support 106 to facilitate usinglower power levels for the heat lamps. Using lower power levelsfacilitates reduced costs and operational efficiencies.

FIG. 7 is a partial schematic side cross-sectional view of a processingchamber 700 with the process kit 310 in a processing position, accordingto one implementation. The processing chamber 700 is similar to theprocessing chamber 300 shown in FIG. 3 , and includes one or more of theaspects, features, components, properties, and/or operations thereof.

In FIG. 7 , the processing position is a raised position. The processingchamber 700 includes an upper liner 712. The upper liner 712 is similarto the upper liner 312 shown in FIG. 3 , and includes one or more of theaspects, features, components, properties, and/or operations thereof.

The ledge 313 is omitted from the upper liner 712 such that the middleplate 321 can lower downwardly past the upper liner 712. The middleplate 321 is free floating relative to the upper liner 712.

FIG. 8 is a partial schematic side cross-sectional view of theprocessing chamber 700 with the process kit 310 (shown in FIG. 7 ) in acleaning position, according to one implementation. In FIG. 8 , thecleaning position is a lowered position relative to the processingposition shown in FIG. 7 .

In the cleaning position in FIG. 4 , the substrate 102 has been removedfrom the internal volume of the processing chamber 300. Using loweringof the substrate support 106, the process kit 310 has been lowered suchthat the middle plate 321 is lowered to be at a gap from the upper liner712. One or more cleaning gases C1 are supplied into the processingvolume 136 through the gas inlets 114. At least part of the one or morecleaning gases C1 flow through the gap between the middle plate 321 andthe upper liner 712, and into the upper portion 136 b.

FIG. 9 is a partial schematic side cross-sectional view of the upperliner 312, according to one implementation.

FIG. 10 is a schematic top view of the process kit 310, according to oneimplementation. The process kit 310 includes a plurality of lockextensions 1001 extending outwardly relative to the middle plate 321.The lock extensions 1001 are attached to the middle plate 321 orintegrally formed with the middle plate 321. The lock extensions 1001extend from the first and second sides 322, 323. The present disclosurecontemplates that the lock extensions 1001 can extend from a top surfaceof the middle plate 321.

In the implementation shown in FIG. 9 , the upper liner 312 includes twolevels of lock stop structures 910 a, 910 b facing inwardly. A set ofthe lock stop structures 910 a, 910 b can be included for each lockextension 1001 (as shown in FIG. 10 ). In one embodiment, which can becombined with other embodiments, the upper liner 312 includes four setsof lock stop structures 910A, 9106 (as shown in FIG. 10 ). Inner lockstop structures 910 a prevent the process kit 310 from rotating when theprocess kit 310 is in the lower position by providing stops for theflanges 331, 332.

Two of outer lock stop structures 910 a defines a first radial boundaryand a second radial boundary between which a respective lock extension1001 can move along a rotational path by a rotation angle A1. Theprocess kit 310 can rotate by an angle up to the rotation angle A1 whenthe process kit is in the upper position such that the flanges 331, 332clear the inner lock stop structures 910 b (as shown in ghost in FIG. 9). The process kit 310 can be rotated when in the raised position, forexample, prior to lowering the process kit 310 such that the middleplate 321 is supported on a component (such as the upper liner 312). Therotation of the process kit 310 can be used to adjust the orientation ofthe rectangular flow opening 350 between deposition operations and/orbetween cleaning operations, which facilitates adjustability of thegases and uniformity of the deposition and/or cleaning.

The inner lock stop structures 910 a and the outer lock stop structures910 b can be disposed in respective channels formed in an inner face ofthe upper liner 312.

Each of the first flange 331 and the second flange 332 can include arespective protrusion section 335, 336 that interfaces with thesubstrate support 106. In one embodiment, which can be combined withother embodiments, the substrate support 106 raises and interfaces withthe protrusion sections 335, 336 to lift outer sections 337, 338 of thefirst and second flanges 331, 332 off of the pre-heat ring 302.

FIG. 11 is a schematic side view of the lock extensions 1001 shown inFIG. 10 , according to one implementation.

FIG. 12 is a schematic top plan view of the spatial configuration of theprocess kit 310 disposed in the processing chamber 300, according to oneimplementation.

An outer diameter OD1 of the middle plate 321 is equal to or lesser thanan inner diameter ID1 of the upper liner 312. An inner diameter ID2between inner edges of the flanges 331, 332 is lesser than an outerdiameter OD2 of the substrate support 106. An outer diameter OD3 betweenouter edges of the flanges 331, 332 is greater than an inner diameterID3 of the pre-heat ring 302.

FIG. 13 is a partial schematic side cross-sectional view of a processingchamber 1300 with a process kit 1310 in a processing position, accordingto one implementation.

FIG. 14 is an enlarged cross-sectional view of the processing chamber1300 shown in FIG. 13 , according to one implementation. Thecross-sectional view of FIG. 14 is taken along a different radial anglethan the cross-sectional view shown in FIG. 13 .

The processing chamber 1300 is similar to the processing chamber 300shown in FIG. 3 , and includes one or more of the aspects, features,components, properties, and/or operations thereof. The process kit 1310is similar to the process kit 310 shown in FIG. 3 , and includes one ormore of the aspects, features, components, properties, and/or operationsthereof.

The process kit 1310 includes a flow guide 1320 and a cover 1350. InFIGS. 13 and 14 the cover 1350 is in a lowered position to effectivelyseal the upper portion 136 b from the lower portion 136 a of the processvolume 136. The ledge 313 is omitted from the upper liner 712 such thatthe middle plate 321 can lower downwardly past the upper liner 712. Themiddle plate 321 is free floating relative to the upper liner 712.Flanges 1331, 1332 (described below) of the flow guide 1320 aresupported on the pre-heat ring 302. The cover 1350 includes protrusions1354, 1355 (discussed below) extending into openings 1325, 1326(discussed below) of the flow guide 1320.

Lifting of the substrate support 106 engages the substrate support 106with the protrusions 1354, 1355 to raise the cover 1350 relative to theflow guide 1320.

FIG. 15 is a partial schematic side cross-sectional view of theprocessing chamber 1300 with the process kit 1310 (shown in FIG. 13 ) ina cleaning position, according to one implementation.

In FIG. 15 , the cleaning position is a raised position relative to theprocessing position shown in FIG. 13 .

FIG. 16 is an enlarged cross-sectional view of the processing chamber1300 shown in FIG. 15 , according to one implementation. Thecross-sectional view of FIG. 16 is taken along a different radial anglethan the cross-sectional view shown in FIG. 15 .

In FIGS. 15 and 16 the substrate 102 has been removed from theprocessing chamber 1300, and the cover 1350 has been lifted into araised position to open one or more gaps between the cover 1350 and theflow guide 1320. One or more cleaning gases C1 flow through the one ormore gaps, through one or more first openings 1356 of the cover 1350,and into the upper portions 136 b of the process volume 136. Thecleaning gases C1 flow through one or more second openings 1357 of thecover 1350, through one or more gaps between the cover 1350 and the flowguide 1320, and are exhausted from the processing chamber 1300.

In the cleaning position in FIGS. 15 and 16 , the substrate 102 has beenremoved from the internal volume of the processing chamber 300. Usinglowering of the substrate support 106, the process kit 310 has beenlowered such that the middle plate 321 is lowered to be at a gap fromthe upper liner 712. One or more cleaning gases C1 are supplied into theprocessing volume 136 through the gas inlets 114. At least part of theone or more cleaning gases C1 flow through the gap between the middleplate 321 and the upper liner 712, and into the upper portion 136 b.

FIG. 17 is a schematic top view of the flow guide 1320 and the cover1350 shown in FIG. 13 , according to one implementation.

FIG. 18 is a schematic bottom view of the flow guide 1320 and the cover1350 shown in FIG. 13 , according to one implementation.

FIG. 19 is a schematic top view of the flow guide 1320 shown in FIG. 13, according to one implementation.

FIG. 20 is a schematic perspective view of a bottom of the flow guide1320 shown in FIG. 13 , according to one implementation.

The flow guide 1320 includes a middle plate 1321 having a first side1322 and a second side 1323 opposing the first side 1322 along a firstdirection. The first side 1322 and the second side 1323 are arcuate. Theflow guide 1320 includes a first flange 1331 extending outwardlyrelative to a third side 1327 of the middle plate 1321 and outwardlyrelative to an outer face 1345 of the middle plate 1321, and a secondflange 1332 extending outwardly relative to a fourth side 1328 of themiddle plate 1321 and outwardly relative to the outer face 1345 of themiddle plate 1321. The fourth side 1328 opposes the third side 1327along a second direction that intersects the first direction. In one ormore embodiments, the second direction is perpendicular to the firstdirection. A rectangular flow opening 1381 is defined between a firstplanar inner face 1333 of the first flange 1331 and a second planarinner face 1334 of the second flange 1332.

The flow guide 1320 includes a first edge section 1335 extending betweenthe third side 1327 of the middle plate 1321 and the first flange 1331,and a second edge section 1336 extending between the fourth side 1328 ofthe middle plate 1321 and the second flange 1332. Each of the first edgesection 1335 and the second edge section 1336 is rectangular in shape.The flow guide 1320 includes a first opening 1325 formed between thefirst flange 1331 and the first edge section 1335, and a second opening1326 formed between the second flange 1332 and the second edge section1336.

FIG. 21 is a schematic top view of the cover 1350 shown in FIG. 13 ,according to one implementation.

FIG. 22 is a schematic perspective view of a bottom of the cover 1350shown in FIG. 13 , according to one implementation.

The cover 1350 includes a ring 1351, a first protrusion 1354 extendingfrom the ring 1351 and configured to extend into the first opening 1325of the flow guide 1320. The cover 1350 includes a second protrusion 1355extending from the ring 1351 and configured to extend into the secondopening 1326 of the flow guide 1320.

The first protrusion 1354 and the second protrusion 1355 are slidablerespectively in the first opening 1325 and the second opening 1326 ofthe flow guide 1320. Each of the first opening 1325, the second opening1326, the first protrusion 1354, and the second protrusion 1355 issemi-circular in shape.

FIG. 23 is a partial schematic side cross-sectional view of a processingchamber 2300 with a process kit 2310 in a processing position, accordingto one implementation.

The processing chamber 2300 is similar to the processing chamber 300shown in FIG. 3 , and includes one or more of the aspects, features,components, properties, and/or operations thereof. The process kit 2310is similar to the process kit 310 shown in FIG. 3 , and includes one ormore of the aspects, features, components, properties, and/or operationsthereof.

In the implementation shown in FIG. 23 , the flanges 331, 332 aremovable upwardly and downwardly relative to the middle plate 321, andthe middle plate 321 is supported on the ledge 313 of the upper liner312. In the implementation shown in FIG. 23 , one or more first openings2351 are formed in the middle plate 321 adjacent to the first side 322,and one or more second openings 2352 are formed in the middle plate 321adjacent to the second side 323.

The process kit 2310 includes a cover 2320 configured to cover the oneor more first openings 2351 and the one or more second openings 2352when the cover 2320 is in the processing position shown in FIG. 23 . Thecover 2320 includes a ring having a width W1 that is larger than a majordiameter MD1 of each of the one or more first openings 2351 and the oneor more second openings 2352.

The resting of the cover 2320 on the middle plate 321 in the processingposition seals the openings 2351, 2352 to seal the upper portion 136 bof the process volume 136 from the lower portion 136 a.

The cover 2320 is supported on the protrusion section 335 of the firstflange 331 and the protrusion section 336 of the second flange 332.Raising and lowering of the substrate support 306 raises and lowers theflanges 331, 332, which in turn raises and lowers the cover 2320 usingthe interface between the protrusion sections 335, 3365 and the cover2320.

FIG. 24 is a partial schematic side cross-sectional view of theprocessing chamber 2300 with the process kit 2310 (shown in FIG. 23 ) ina cleaning position, according to one implementation.

In FIG. 24 , the cleaning position is a raised position relative to theprocessing position shown in FIG. 23 .

In FIG. 24 the substrate has been removed from the processing chamber1300, and the cover 2320 has been lifted into a raised position to openthe openings 2351, 2352 of the middle plate 321. One or more cleaninggases C1 flow through the one or more first openings 2351 and into theupper portion 136 b of the process volume 136. The cleaning gases C1flow through the one or more second openings 2352, and the flow guide1320, and are exhausted from the processing chamber 2300.

FIG. 25 is schematic top view of the process kit 2310 shown in FIGS. 23and 24 , according to one implementation. An inner face (e.g., a bottomface) of the middle plate 321 (which faces the substrate support 106 andthe substrate 102) can be planar, as shown in FIG. 3 .

FIG. 26 is schematic top view of the process kit 2310 shown in FIGS. 23and 24 , according to one implementation. In the implementation shown inFIG. 26 , the inner face of the middle plate 321 includes a plurality offins 2610 extending along a length L1 of the middle plate 321. Thelength L1 extends between the first side 322 and the second side 323. Inthe implementation shown in FIG. 25 , the length L1 corresponds to adiameter of the middle plate 321 between. In the implementation shown inFIG. 26 , the first side 322 and the second side 323 of the middle plate321 are linear (rather than arcuate) such that the length L1 is thelength of a rectangular shape.

FIG. 27 is schematic top view of the process kit 2310 shown in FIGS. 23and 24 , according to one implementation. In the implementation shown inFIG. 27 , the inner face of the middle plate 321 includes a plurality offins 2710. Each of the fins 271 has a length L2 that is lesser than thelength L1 of the middle plate 321. In the implementation shown in FIG.27 , the length L2 is about 50% of the length L1.

FIG. 28 is schematic top view of the process kit 2310 shown in FIGS. 23and 24 , according to one implementation. In the implementation shown inFIG. 28 , the inner face of the middle plate 321 includes a plurality offins 2810. Each of the fins 271 has a length L2 that is lesser than thelength L1 of the middle plate 321. In the implementation shown in FIG.28 , the length L2 is about 30% of the length L1.

FIG. 29 is a schematic perspective view of the inner face of the middleplate 321 shown in FIG. 26 , according to one implementation. As shownin FIG. 29 , the one or more process gases P1 flow through flow pathsbetween the fins 2610.

FIG. 30 is a schematic cross-sectional side view of the middle plate 321shown in FIG. 29 , according to one implementation. As shown in FIGS. 29and 30 , the fins 2610 have a planar edge 2611.

FIG. 31 is a schematic cross-sectional side view of the middle plate 321shown in FIG. 29 , according to one implementation. As shown in FIG. 31, fins 3110 have an arcuate edge 3111.

FIG. 32 is a schematic cross-sectional side view of the middle plate 321shown in FIG. 29 , according to one implementation. As shown in FIG. 32, fins 3210 have a patterned edge 3211 such that multiple arcs areincluded along the length L1 for each fin 3210.

FIG. 33 is a schematic side view of the middle plate 321 shown in FIG.26 , according to one implementation. In the implementation shown inFIG. 33 , the fins 2610 are omitted and the middle plate 321 includes apair of support legs 3310, 3311. The support legs 3310, 3311 can besupported on one or more of the flanges 331, 332, the substrate support106, the upper liner 312, and/or the pre-heat ring 302.

FIG. 34 is a schematic block diagram view of a method 3400 of processingsubstrates, according to one implementation.

Operation 3402 includes heating a substrate positioned on a substratesupport.

Operation 3404 includes flowing one or more process gases over thesubstrate to form one or more layers on the substrate. The flowing ofthe one or more process gases over the substrate includes guiding theone or more process gases through a rectangular flow opening of aprocess kit. In one embodiment, which can be combined with otherembodiments, the one or more process gases are supplied at a pressurethat is 300 Torr or greater, such as within a range of 300 Torr to 600Torr. In one embodiment, which can be combined with other embodiments,the one or more process gases are supplied at a flow rate that is lessthan 5,000 standard cubic centimeters per minute (SCCM). In oneembodiment, which can be combined with other embodiments, the substrateis rotated at a rotation speed that is less than 8 rotations-per-minute(RPM) during the flowing of the one or more process gases over thesubstrate. In one example, which can be combined with other examples,the rotation speed is 1 RPM.

Operation 3405 includes exhausting the one or more process gases throughan exhaust path formed at least partially in a sidewall.

Operation 3406 includes, after the exhausting of the one or more processgases, moving at least part of the process kit to open one or more firstopenings and one or more second openings. At least the part of theprocess kit is moved by a distance that is less than 20 mm, such as 10mm. In one or more embodiments, the moving includes lifting or loweringat least the part of the process kit. In one embodiment, which can becombined with other embodiments, the moving of at least the part of theprocess kit includes lifting a cover to slide one or more protrusions ofthe cover relative to a middle plate of a flow guide while the middleplate is supported on a pre-heat ring. In one embodiment, which can becombined with other embodiments, the moving of at least the part of theprocess kit includes lifting a cover. The cover includes a ring having awidth that is larger than a major diameter of each of the one or morefirst openings and the one or more second openings. In one embodiment,which can be combined with other embodiments, the moving of at least thepart of the process kit includes lifting or lowering a middle plate of aflow guide by moving two flanges coupled to the middle plate using thesubstrate support.

Operation 3408 includes flowing one or more cleaning gases through theone or more first openings and into a region between the process kit anda window.

Operation 3410 includes flowing the one or more cleaning gases throughthe region and into the one or more second openings.

Operation 3412 includes, after the flowing of the one or more cleaninggases into the one or more second openings, exhausting the one or morecleaning gases through the exhaust path.

Operation 3414 includes rotating the process kit by a rotation anglethat is greater than 0 degrees and less than 90 degrees. The process kitcan be rotated, for example, while the process kit is in a cleaningposition that is used for operations 3408, 3410. In one embodiment,which can be combined with other embodiments, the rotation angle iswithin a range of 15 degrees to 30 degrees.

The method 3400 can also include flowing one or more purge gases intothe processing chamber. The one or more purge gases can flow into theprocessing chamber before, during, and/or after one or more of operation3404, operation 3405, operation 3408, operation 3410, and/or operation3412. The one or more purge gases can flow into a slit valve of theprocessing chamber, the lower portion 136 a of the processing volume,the upper portion 136 b of the processing volume 136, any otherportion(s) of the processing volume 136, and/or the purge volume 138.

FIG. 35 is a partial schematic side cross-sectional view of a processingchamber 3500 with a process kit 3510, according to one implementation.The processing chamber 3500 is similar to the processing chamber 300shown in FIG. 3 , and includes one or more of the aspects, features,components, properties, and/or operations thereof. The processingchamber 3500 is shown in a processing condition in FIG. 35 .

The process kit 3510 includes a plate 3511 having a first face 3512 anda second face 3513 opposing the first face 3512. The second face 3513faces the substrate support 106. The process kit 3510 includes a liner3520. The liner 3520 includes an annular section 3521, and one or moreledges 3522 extending inwardly relative to the annular section 3521. Theone or more ledges 3522 are configured to support one or more outerregions of the second face 3513 of the plate 3511. The liner 3520includes one or more inlet openings 3523 extending to an inner surface3524 of the annular section 3521 on a first side of the liner 3520, andone or more outlet openings 3525 extending to the inner surface 3524 ofthe annular section 3521 on a second side of the liner 3520.

The one or more inlet openings 3523 extend from an outer surface 3526 ofthe annular section 3521 of the liner 3520 to the inner surface 3524.The one or more outlet openings 3525 extend from a lower surface 3529 ofthe liner 3520 to the inner surface 3524. The liner 3520 includes afirst extension 3527 and a second extension 3528 disposed outwardly ofthe lower surface 3529 of the liner 3520. At least part of the annularsection 3521 of the liner 3520 is aligned with the first extension 3527and the second extension 3528. In the implementation shown in FIG. 35 ,a lowermost end of the plate 3511 is aligned above a lowermost end ofthe liner 3520. In the implementation shown in FIG. 35 , the lowermostend of the plate 3511 is part of the second face 3513, and the lowermostend of the liner 3520 is part of the first extension 3527 and/or thesecond extension 3528. The present disclosure contemplates that thelowermost end of the liner 3520 can be part of the lower surface 3529.

The plate 3511 is in the shape of a disc, and the annular section 3521is in the shape of a ring. The plate 3511 can be in the shape of arectangle. In or more embodiments, the one or more ledges 3522 include asingle ledge in the shape of a ring. In one or more embodiments, the oneor more ledges 3522 include two ledges that oppose each other and are inthe shape of arcuate segments.

The flow module 112 (which can be at least part of a sidewall of theprocessing chamber 3500) includes one or more first inlet openings 3514in fluid communication with the lower portion 136 a of the processingvolume 136. The flow module 112 includes one or more second inletopenings 3515 in fluid communication with the upper portion 136 b of theprocessing volume 136. The one or more first inlet openings 3514 are influid communication with one or more flow gaps between the liner 3520(an upper liner in FIG. 35 ) and the lower liner 311. The one or moresecond inlet openings 3515 are in fluid communication with the one ormore inlet openings 3523 of the liner 3520.

In the implementations shown in FIGS. 35 and 37 , the one or more inletopenings 3523 are oriented in a horizontal orientation and the one ormore outlet openings 3525 are oriented in an angled orientation. Thepresent disclosure contemplates that the one or more inlet and/or outletopenings 3523, 3525 can be oriented in a horizontal orientation,oriented in an angled orientation, and/or can include one or more turns(such as the turns shown for the one or more first inlet openings 3514and the one or more gas exhaust outlets 116.

During a deposition operation (e.g., an epitaxial growth operation), theone or more process gases P1 flow through the one or more first inletopenings 3514, through the one or more gaps, and into the lower portion136 a of the processing volume 136 to flow over the substrate 102.During the deposition operation, one or more purge gases P2 flow throughthe one or more second inlet openings 3515, through the one or moreinlet openings 3523 of the liner 3520, and into the upper portion 136 bof the processing volume 136. The one or more purge gases P2 flowsimultaneously with the flowing of the one or more process gases P1. Theflowing of the one or more purge gases P2 through the upper portion 136b facilitates reducing or preventing flow of the one or more processgases P1 into the upper portion 136 b that would contaminate the upperportion 136 b. The one or more process gases P1 are exhausted throughgaps between the liner 3520 and the lower liner 311, and through the oneor more gas exhaust outlets 116. The one or more purge gases P2 areexhausted through the one or more outlet openings 3525, through the samegaps between the liner 3520 and the lower liner 311, and through thesame one or more gas exhaust outlets 116 as the one or more processgases P1. The present disclosure contemplates that that one or morepurge gases P2 can be separately exhausted through one or more secondgas exhaust outlets that are separate from the one or more gas exhaustoutlets 116.

The present disclosure also contemplates that one or more purge gasescan be supplied to the purge volume 138 (through the plurality of purgegas inlets 164) during the deposition operation, and exhausted from thepurge volume 138.

FIG. 36 is a schematic perspective view of the process kit 3510 shown inFIG. 35 , according to one implementation.

FIG. 37 is a partial schematic side cross-sectional view of theprocessing chamber 3500 shown in FIG. 35 , according to oneimplementation. The processing chamber 3500 is shown in a cleaningcondition in FIG. 37 .

During a cleaning operation, one or more cleaning gases C1 flow throughthe one or more first inlet openings 3514, through the one or more gaps(between the liner 3520 and the lower liner 311), and into the lowerportion 136 a of the processing volume 136. During the cleaningoperation, one or more cleaning gases C2 flow through the one or moresecond inlet openings 3515, through the one or more inlet openings 3523of the liner 3520, and into the upper portion 136 b of the processingvolume 136. The one or more cleaning gases C2 flow simultaneously withthe flowing of the one or more cleaning gases C1. The present disclosurecontemplates that the one or more cleaning gases C2 used to cleansurfaces adjacent the upper portion 136 b can be the same as ordifferent than the one or more cleaning gases C1 used to clean surfacesadjacent the lower portion 136 a of the processing volume 136.

The processing chamber 3500 facilitates separating the gases provided tothe lower portion 136 a from the gases provided to the upper portion 136b, which facilitates parameter adjustability. Additionally, one or morepurge gases and one or more cleaning gases can be separately provided tothe upper portion 136 b to facilitate reduced contamination of thewindow 108 and/or the plate 3511.

As shown in FIGS. 35 and 37 , the one or more second inlet openings 3515can be aligned above the one or more first inlet openings 3514, and theone or more inlet openings 3523 of the liner 3520 can be aligned abovethe one or more gaps between the liner 3520 and the lower liner 311. Asshown in FIG. 38 , the one or more second inlet openings 3515 can beangularly offset from the one or more first inlet openings 3514, and theone or more inlet openings 3523 of the liner 3520 can be angularlyoffset from the one or more gaps between the liner 3520 and the lowerliner 311.

The flow of gases in the lower portion 136 a and the upper portion 136 bduring both the deposition operation and the cleaning operationfacilitates reduced or eliminated backflow of gases at the one or moreoutlet openings 3525 (e.g., backflow from the one or more outletopenings 3525 into the upper portion 136 b) and the one or more gasexhaust outlets 116 (e.g., backflow from the gaps into the lower portion136 a).

FIG. 38 is a schematic partial top view of the plate 3511, the flowmodule 112, and the liner 3520 shown in FIGS. 35 and 37 , according toone implementation. In the implementation shown in FIG. 38 , the one ormore second inlet openings 3515 are angularly offset from the one ormore first inlet openings 3514 along a circumference of the processingchamber 3500 (e.g., a circumference 3801 of the flow module 112).

The one or more inlet openings 3523 of the liner 3520 can be angularlyoffset from the one or more gaps between the liner 3520 and the lowerliner 311 along a circumference of the chamber (e.g., a circumference3801 of the liner 3520).

FIG. 39 is a schematic block diagram view of a method 3900 of processingsubstrates, according to one implementation.

Operation 3901 of the method 3900 includes heating a substratepositioned on a substrate support in a chamber.

Operation 3903 includes flowing one or more process gases over thesubstrate to form one or more layers on the substrate. The one or moreprocess gases flow through one or more first inlet openings in fluidcommunication with the lower portion of the processing volume. Theflowing of the one or more process gases over the substrate includesguiding the one or more process gases between a plate and the substrate.The plate is supported on a liner to divide the processing volume into alower portion and an upper portion. Operation 3903 includes flowing oneor more purge gases through the upper portion simultaneously with theflowing of the one or more process gases over the substrate. The one ormore purge gases flow through one or more second inlet openings in fluidcommunication with the upper portion of the processing volume.

Operation 3905 includes exhausting the one or more process gases.

Operation 3907 includes flowing one or more cleaning gases through theupper portion while the plate is supported on the liner, the upperportion being between the plate and a window. Operation 3907 includesflowing one or more cleaning gases through the lower portion of theprocessing volume simultaneously with the flowing of the one or morecleaning gases through the upper portion.

Operation 3909 includes exhausting the one or more cleaning gases fromthe upper portion and the lower portion of the processing volume.

FIG. 40 is a partial schematic side cross-sectional view of a processingchamber 4000, according to one implementation. The processing chamber4000 is similar to the processing chamber 3500 shown in FIGS. 35 and 37, and includes one or more of the aspects, features, components,properties, and/or operations thereof. The processing chamber 4000 isshown in a processing condition in FIG. 40 .

The processing chamber 4000 includes a window 4008 that at leastpartially defines the processing volume 136. The window 4008 includes afirst face 4011 that is concave or flat (in the implementation shown inFIG. 40 , the first face 4011 is flat). The window 4008 includes asecond face 4012 that is convex. The second face 4012 faces thesubstrate support 106.

A process kit in the processing chamber 4000 includes a liner 4020. Theliner 4020 is similar to the liner 3520 shown in FIGS. 35 and 37 , andincludes one or more of the aspects, features, components, properties,and/or operations thereof.

The window 4008 includes an inner section 4013 and an outer section4014. The first face 4011 and the second face 4012 are at least part ofthe inner section 4013. The inner section 4013 is transparent and theouter section 4014 is opaque. The outer section 4014 is received atleast partially in one or more sidewalls (such as in the flow module112) of the processing chamber 4000.

FIG. 41 is a schematic enlarged view of the window 4008 shown in FIG. 40, according to one implementation. The second face 4012 of the window4008 includes one or more portions, and each of the one or more portionshas a radius of curvature R1 that is larger than a width W1 of the innersection 4013 by at least a factor of 1.5. In one or more embodiments,the radius of curvature R1 is larger than the width W1 by at least afactor of 2.0. The second face 4012 has an arc angle A1 that is lessthan 25 degrees. In one or more embodiments, the arc angle A1 is 20degrees or less, such as 15 degrees or 20 degrees. In one or moreembodiments, the arc angle A1 is 6.0 degrees or less. In one or moreexamples of such embodiments, the arc angle A1 is within a range of 3.7degrees to 4.3 degrees, such as 4.0 degrees.

As discussed herein, the present disclosure facilitates reduced orremoved effects that the shape of a window (e.g., concave, convex, orsubstantially flat) can have on processing (e.g., epitaxial deposition)operations, processing parameters, and film thickness growth. Asubstantially flat window (such as the window 4008 shown in FIGS. 40 and41 ) can be used with a variety of processing chamber configurations, avariety of process kit configurations, and/or a variety of processconfigurations.

FIG. 42 is a schematic top view of a flow guide 4200, according to oneimplementation. The flow guide 4200 is disposed above the substrate 102.The flow guide 4200 includes a plate 4201 having a first face and asecond face opposing the first face. The flow guide 4200 includes afirst fin set 4210 a extending from the second face of the plate 4201,and a second fin set 4210 b extending from the second face of the plate4201. The second fin set 4210 b is spaced from the first fin set 4210 ato define a flow path 4230 between the first fin set 4210 a and thesecond fin set 4210 b. The flow path 4230 has a serpentine patternbetween the first fin set 4210 a and the second fin set 4210 b. The flowpath 4230 is a single flow path between the first fin set 4210 a and thesecond fin set 4210 b. The serpentine flow path 4230 includes aplurality of linear paths (such as straightaways) and a plurality ofarcuate paths (such as arcuate turns) interleaved with the plurality oflinear paths. In one or more embodiments, the serpentine flow path 4230includes a plurality of linear (such as rectangular) sections bounded atleast partially by the linear sections of the two fin sets 4210 a, 4210b. In one or more embodiments, the serpentine flow path 4230 includes aplurality of arcuate (such as semi-circular) sections bounded at leastpartially by the arcuate sections of the two fin sets 4210 a, 4210 b.For each fin set 4210 a, 4210 b, the respective fins can be coupledtogether. For example, the respective fins can be integrally formed,fastened together, fused together, welded together, and/or otherwiseattached to each other to make up the respective fin set 4210 a, 4210 b.

Each of the first fin set 4210 a and the second fin set 4210 b includesa plurality of linear sections 4211 a, 4211 b intersecting a pluralityof arcuate sections 4212 a, 4212 b. The first fin set 4210 a areinterleaved with the second fin set 4210 b such that the plurality oflinear sections 4211 a of the first fin set 4210 a are disposed in analternating arrangement with the plurality of linear sections 4211 b ofthe second fin set 4210 b. For each of the first fin set 4210 a and thesecond fin set 4210 b the plurality of linear sections 4211 a, 4211 bincludes a first outer linear section 4213 a, 4213 b, a second outerlinear section 4214 a, 4214 b, and a plurality of middle linear sections4215 a, 4215 b disposed between the first outer linear section 4213 a,4213 b and the second outer linear section 4214 a, 4214 b.

For each of the first sin set 4210 a and the second fin set 4210 b theplurality of arcuate sections 4212 a, 4212 b includes a first outerarcuate section 4216 a, 4216 b, a second outer arcuate section 4217 a,4217 b, and a plurality of middle arcuate sections 4218 a, 4218 bdisposed between the first outer arcuate section 4216 a, 4216 b and thesecond outer arcuate section 4217 a, 4217 b. For each of the first finset 4210 a and the second fin set 4210 b the first outer linear section4213 a, 4213 b intersects an end of the first outer arcuate section 4216a, 4216 b, and the second outer linear section 4214 a, 4214 b intersectsan end of the second outer arcuate section 4217 a, 4217 b. For each ofthe first fin set 4210 a and the second fin set 4210 b each of theplurality of middle linear sections 4215 a, 4215 b intersects tworespective ends of two of the plurality of arcuate sections 4212 a, 4212b.

The first outer linear section 4213 a of the first fin set 4210 a andthe second outer linear section 4214 b of the second fin set 4210 b havea first length L1. Each of the first outer linear section 4213 b of thesecond fin set 4210 b and the second outer linear section 4214 a of thefirst fin set 4210 a has a length L2, L3 that is longer than the firstlength L1.

During the deposition operation and/or the cleaning operation, gases(such as the one or more process gases P1) flow through the serpentineflow path 4230 between the first fin set 4210 a and the second fin set4210 b. The fins and the serpentine flow path 4230 facilitateadjustability of process parameters and facilitates reduced oreliminated interference with performance (such as reduced or eliminatedvortex effects when the substrate 102 is rotated during processing). Thefins and the serpentine flow path 4230 also facilitate efficient use ofgases (such as the one or more process gases P1). The one or moreprocess gases P1 flow into the flow path 4230 between the first outerlinear section 4213 a and the first outer linear section 4213 b. The oneor more process gases P1 flow out of the flow path 4230 between thesecond outer linear section 4214 a and the second outer linear section4214 b.

The flow path 4230 facilitates a longer flow path and a relativelysmaller flow path cross-sectional area, which can increase gas flowspeeds for modularity, parameter adjustability, and enhanced uniformityat substantially similar gas partial pressures. The fins of the flowguide 4200 facilitate reduced or eliminated shadowing effects. The flowguides described herein are modular and swappable.

FIG. 43 is a schematic top view of a flow guide 4300, according to oneimplementation. The flow guide 4300 is similar to the flow guide 4200shown in FIG. 42 , and includes one or more of the aspects, features,components, properties, and/or operations thereof. For each of a firstfin set 4310 a and a second fin set 4310 b a plurality of arcuatesections 4312 a, 4312 b have a radius gradient that decreases in adirection D1 extending from a first side of the plate 4201 and to asecond side of the plate 4201. For example, an Nth radius RA_(N) of asecond outer arcuate section 4317 a of the first fin set 4310 a issmaller than a first radius RA₁ of a first outer arcuate section 4316 aof the first fin set 4310 a, and an Nth radius RD_(N) of a second outerarcuate section 4317 b of the second fin set 4310 b is smaller than afirst radius RD₁ of a first outer arcuate section 4316 b. A flow path4330 has a width gradient that decreases in the direction D1. Forexample, an Nth width WD_(N) is smaller than a first width WD₁ of theflow path 4330. The reducing gradients facilitate increase gas speedsand uniformity of adjustability of process parameters. The widthgradient facilitates uniformities of gas flow speed adjustments.

The plate 4201 includes a first end 4251 and a second end 4252 oppositeof the first end 4251. The first outer linear section 4313 a of thefirst fin set 4310 a is disposed at a first distance DS1 relative to thefirst end 4251 of the plate 4201. The second outer linear section 4314 aof the first fin set 4310 a is disposed at a second distance DS2relative to the second end 4252 of the plate 4201. The second distanceDS2 is different than the first distance DS1. In the implementationshown in FIG. 43 , the second distance DS2 is larger than the firstdistance DS1.

FIG. 44 is a schematic bottom perspective view of the flow guide 4200shown in FIG. 42 , according to one implementation.

FIG. 45 is a schematic partial side view of the flow guide 4300 shown inFIG. 43 , according to one implementation. The first fin set 4310 aincludes a first outer linear section 4313 a, a second outer linearsection 4314 a, and a plurality of middle linear sections 4315 a. Thesecond fin set 4310 b includes a first outer linear section 4313 b, asecond outer linear section 4314 b, and a plurality of middle linearsections 4315 b. In the implementation shown in FIG. 45 , the sectionsof the flow path 4330 between the respective fins are rectangular inshape.

FIG. 46 is a schematic partial side view of the flow guide 4300 shown inFIG. 43 , according to one implementation. In the implementation shownin FIG. 46 , the sections of the flow path 4330 between the respectivefins include portions that are semi-circular in shape and portions thatare rectangular in shape.

In the implementation shown in FIG. 46 , the flow guide 4300 includes aplurality of flow openings 4651 extending through the plate 4201 and tothe flow path 4330. The flow openings 4651 facilitate injecting gasesinto the lower portion 136 a of the processing volume 136 from the upperportion 136 b of the processing volume 136. In the implementation shownin FIG. 46 , a plurality of second arcuate sections 4655 are disposedbetween the respective fins. The second arcuate sections 4655 interfacewith the plate 4201. The flow openings 4651 extend through the plate4201 and the second arcuate sections 4655.

FIG. 47 is a schematic top view of the flow guide 4200 shown in FIG. 42, according to one implementation. In the implementation shown in FIG.47 , the flow guide 4200 is shifted laterally (relative to the positionshown in FIG. 42 ) to be more laterally offset relative to the substrate102 and the substrate support 106. For example, the second outer linearsection 4214 b is moved to be aligned at least partially above thesubstrate support 106, and the first outer linear section 4213 a ismoved to be at a farther distance relative to the substrate 102 and thesubstrate support 106. The movement of the flow guide 4200 canfacilitate adjustability of process parameters and deposition thickness.The offset position of the flow guide 4200 facilitates operationaluniformity (e.g., deposition uniformity) such as when the substrate 102is rotated during processing.

FIG. 48 is a schematic top view of a flow guide 4800, according to oneimplementation. The flow guide 4800 is similar to the flow guide 4200shown in FIG. 42 , and includes one or more of the aspects, features,components, properties, and/or operations thereof.

The flow guide 4800 includes a first fin set 4810 a extending thatincludes a plurality of first fins 4811 a spaced from each other todefine a first set of flow paths 4812 a. The flow guide 4800 includes asecond fin set 4810 b having a plurality of second fins 4811 b spacedfrom each other to define a second set of flow paths 4812 b. The flowguide 4800 includes a central flow path 4830 between a first inner fin4821 a of the first fin set 4810 a and a second inner fin 4821 b of thesecond fin set 4810 b.

Each of the plurality of first fins 4811 a, the plurality of second fins4811 b, the first set of flow paths 4812 a, and the second set of flowpaths 4812 b is arcuate. The central flow path 4830 is convex in shape.The first fin set 4810 a includes a first outer fin 4814 a disposedoutwardly of the plurality of first fins 4811 a, and the second fin set4810 b includes a second outer fin 4814 b disposed outwardly of theplurality of second fins 4811 b. Each of the first outer fin 4814 a andthe second outer fin 4814 b has a length LE2 that is longer than lengthsLE1 of the plurality of first fins 4811 a and the plurality of secondfins 4811 b.

The flow guide 4800 facilitates equal flow flux across a plurality ofregions of an exposed surface of the substrate 102. As an example, gasspeeds of one or more process gases P1 across a first region (alignedunder the first set of flow paths 4812 a), a second region (alignedunder the central flow path 4830), and a third region (aligned under thesecond set of flow paths 4812 b) of the substrate 102 are substantiallyequal to each other. The one or more process gases P1 can be supplied toeach of the central flow path 4830, the first set of flow paths 4812 a,and the second set of flow paths 4812 b from the same gas source. Thepresent disclosure contemplates that the one or more process gases P1can be supplied independently to each of the central flow path 4830, thefirst set of flow paths 4812 a, and the second set of flow paths 4812 b.

FIG. 49 is a schematic partial side view of the flow guide 4200 shown inFIG. 42 in a processing chamber during a lowered condition, according toone implementation.

FIG. 50 is a schematic partial side view of the flow guide 4200 shown inFIG. 49 during a raised condition, according to one implementation.

As shown in the lowered condition of FIG. 49 , a distance DA1 betweenthe first set of fins 4210 a and the second set of fins 4210 b (on oneside) and the substrate 102 (on another side) is lesser than thedistance DA1 shown in FIG. 50 . One or more of the substrate support 106and/or the plate 4201 of the flow guide 4200 can be moved to adjust thedistance DA1. The distance DA1 can be adjusted during processingoperations and/or between iterations of processing operations. In one ormore embodiments, the plate 4201 can remain supported on the one or moreledges 3522 of the upper liner 3520 during adjustment of the distanceDA1. In one or more embodiments, the plate 4201 can lift off to be at agap from the one or more ledges 3522 during adjustment of the distanceDA1. In one or more embodiments, the distance DA1 shown in FIG. 49 iswithin a range of 0.2 mm to 2.0 mm (such as 1.0 mm) to facilitate asealing condition between the fins of the fin sets 4210 a, 4210 b andthe substrate 102 and guiding of gases through the serpentine pattern ofthe flow path 4230. The distance DA1 during process (e.g., deposition)operations can vary within a range of 0.2 mm to 5.0 mm (such as within arange of 1.0 mm to 5.0 mm).

FIG. 51 is a schematic partial side view of the flow guide 4200 shown inFIG. 49 in a tilted position, according to one implementation. The flowguide 4200 is oriented in the tilted position such that the plate 4201is oriented at an oblique angle relative to the substrate 102. In thetilted position, a first fin 5101 is disposed at a first verticalposition that is different than a second vertical position of a secondfin 5102. In the implementation shown in FIG. 51 , a second ledge 5122has a height that is taller than a height of a first ledge 3522. Thesecond ledge 5122 can be angularly offset from one or more other ledges(such as the first ledge 3522) such that the plate 4201 of the flowguide 4200 can be raised, rotated, and lowered into the tilted positionshown in FIG. 51 . For example, the flow guide 4200 can be moved from ahorizontal position (shown for example in FIG. 49 ) and to the tiltedposition. An upper surface of the first ledge 3522 and/or the secondledge 5122 can be tapered (as shown for the second ledge 5122) tointerface with the tilted plate 4201 that contacts the ledges 3522,5122. In one or more embodiments, the flow guide 4200 can be moved tothe tilted position by raising the substrate support 106 to engage afirst portion of the flow guide 4200 before engaging a second portionsuch that the flow guide 4200 is tilted by further raising of thesubstrate support 106.

FIG. 52 is a schematic partial side view of the flow guide 4200 shown inFIG. 49 in the tilted position, according to one implementation. In oneor more embodiments, the plate 4201 of the flow guide 4200 is coupled tothe first flange 331 and the second flange 332. Each of the first flange331 and the second flange 332 includes a tapered lower surface 5210 suchthat the raising of the substrate support 106 contacts a taller portion(having a first height) of each flange 331, 332 prior to a shorterportion (having a second height) of each flange 331, 332 such thatfurther raising of the substrate support 106 tilts the flow guide 4200.FIG. 53 is a schematic block diagram view of a method 5300 of processingsubstrates, according to one implementation.

Operation 5301 of the method 5300 includes heating a substratepositioned on a substrate support.

Operation 5303 includes flowing one or more process gases over thesubstrate to form one or more layers on the substrate. The flowing ofthe one or more process gases over the substrate includes guiding theone or more process gases through one or more flow paths defined atleast partially by a plurality of fins extending from a plate of a flowguide.

Operation 5305 includes moving one or more of the substrate support orthe plate to adjust a distance between the plurality of fins and thesubstrate. In one or more embodiments, the moving of the plate includesraising the plate to lift the plate relative to a liner, and loweringthe plate to engage the liner and support the plate on the liner in thetilted position. In one or more embodiments, the moving of the plateincludes raising the substrate support to engage one or more flanges ofthe flow guide and tilt the plate into the tilted position. The one ormore flanges includes a first portion having a first height, and asecond portion having a second height that is lesser than the firstheight.

Benefits of the present disclosure include sealing lower portions ofprocess volumes from upper portions of process volumes during processingoperations; modularity in process application; adjusting depositionprocess parameters at low rotation speeds, high pressure, and low flowrates; having the ability to clean processing chambers (such as linersand windows), for example upper portions of processing volumes; reducedor removing effects of window shapes (e.g., profiles) on processingoperations; reduced or eliminated formation of materials on windows; useof curved (e.g., convex and/or concave) windows; temperature adjustingand temperature uniformity; deposition uniformity; high throughput andproduction yield; adjustability of gas flow paths; mitigated rotationeffects; separate provisions of gases to upper portions of processingvolumes; and reduced or eliminated interference with heating (such aslight from heat lamps).

As an example, the rectangular flow opening for the one or more processgases facilitate a smaller cross-section, which facilitates adjustingprocess parameters (such as gas pressure, processing temperature, gascompositions, and/or gas flow rate) for the one or more process gases.The flow guide also facilitates the ability to have a cleaning gas path(which at least partially bypasses the rectangular flow opening) thatfacilitates cleaning of components (such as one or more surfaces of thewindow and/or one or more surfaces of the upper liner) in the internalvolume. The sealing and adjusting facilitates low rotation speeds (suchas less than 8 RPM) of the substrate support, high pressures of the oneor more process gases, and low flow rates of the one or more processgases. As another example, the sealing and the rectangular flow openingfacilitates mitigating the effects (such as gas vortex) of rotation ofthe substrate support on the one or more process gases. As a furtherexample, the flow guide facilitates adjusting while reducing oreliminating interference of the adjustment with the heating ofcomponents (such as the substrate and/or the pre-heat ring). Therectangular flow opening, the sealing, and the adjustability alsofacilitate reducing or removing the effects that the shape of a window(e.g., concave, convex, or substantially flat) can have on processing(e.g., epitaxial deposition) operations, processing parameters, and filmthickness growth. The reducing or removing of effects at least partiallyisolates the window shape from processing efficacy. Additionally, as anexample, the adjustability facilitates the use of concave or convexwindows, in addition to windows that are substantially flat. The presentdisclosure contemplates that substantially flat windows may be used withimplementations described herein.

Furthermore, the implementations of the present disclosure (such as theimplementations of the middle plate) are modular and can be used acrossa variety of processing (e.g., deposition) operations and/or cleaningoperations, including across a variety of operation parameters.Moreover, one or more aspects, features, components, operations and/orproperties of the various process kits (such as the middle plates)described herein can be selected, combined, and/or modified depending onthe processing parameters (such as flow rate, temperature, pressure, gascomposition, etc.) used in the processing operations and/or cleaningoperations.

The sealing also facilitates reduced or eliminated formation ofmaterials (such as deposition of deposition materials during processingoperations) on windows (such as the upper window).

It is contemplated that one or more aspects disclosed herein may becombined. As an example, one or more aspects, features, components,operations and/or properties of the processing chamber 100, thecontroller 120, the processing chamber 300, the processing chamber 700,the lock stop structures 910 a, 910 b, the lock extensions 1001, theprocessing chamber 1300, the processing chamber 2300, the process kit310, the process kit 1310, the process kit 2310, the fins 2610, 2710,2810, 3110 and/or 3210, the support legs 3310, 3311, the method 3400,the processing chamber 3500, the process kit 3510, the method 3900, theprocessing chamber 4000, the window 4008, the flow guide 4200, the flowguide 4300, the flow openings 4651, the flow guide 4800, and/or themethod 5300 may be combined. Moreover, it is contemplated that one ormore aspects disclosed herein may include some or all of theaforementioned benefits.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. A process kit for disposition in a processingchamber applicable for use in semiconductor manufacturing, the processkit comprising: a plate having a first face and a second face opposingthe first face; a liner comprising: an annular section, one or moreledges extending inwardly relative to the annular section, the one ormore ledges configured to support one or more outer regions of thesecond face of the plate, one or more inlet openings extending to aninner surface of the annular section on a first side of the liner, andone or more outlet openings extending to the inner surface of theannular section on a second side of the liner.
 2. The process kit ofclaim 1, wherein the one or more inlet openings extend from an outersurface of the annular section of the liner to the inner surface, andthe one or more outlet openings extend from a lower surface of the linerto the inner surface.
 3. The process kit of claim 1, wherein a lowermostend of the plate is aligned above a lowermost end of the liner.
 4. Theprocess kit of claim 2, wherein the liner further comprises a firstextension and a second extension disposed outwardly of the lower surfaceof the liner.
 5. The process kit of claim 4, wherein at least part ofthe annular section of the liner is aligned with the first extension andthe second extension.
 6. A processing chamber applicable for use insemiconductor manufacturing, comprising: an internal volume; a pluralityof lamps; a substrate support disposed in the internal volume, thesubstrate support comprising a support face; a window at least partiallydefining the internal volume, the window comprising: a first face thatis concave or flat, and a second face that is convex, the second facefacing the substrate support.
 7. The processing chamber of claim 6,wherein the window comprises an inner section and an outer section, thefirst face and the second face being at least part of the inner section.8. The processing chamber of claim 7, wherein the inner section istransparent and the outer section is opaque.
 9. The processing chamberof claim 7, wherein the second face comprises one or more portions, eachof the one or more portions having a radius of curvature that is largerthan a width of the inner section by at least a factor of 1.5.
 10. Theprocessing chamber of claim 9, wherein the radius of curvature is largerthan the width by at least a factor of 2.0.
 11. The processing chamberof claim 7, wherein the second face has an arc angle that is less than40 degrees.
 12. The processing chamber of claim 6, further comprising aprocess kit disposed in the internal volume, the process kit comprising:a plate having a first face and a second face opposing the first face,the second face of the plate facing the first face of the window; and aliner comprising: an annular section, one or more ledges extendinginwardly relative to the annular section, the one or more ledgessupporting one or more outer regions of the second face of the plate.13. The processing chamber of claim 12, wherein the liner furthercomprises: one or more inlet openings extending to an inner surface ofthe annular section on a first side of the liner, and one or more outletopenings extending to the inner surface of the annular section on asecond side of the liner.
 14. The processing chamber of claim 13,wherein the one or more inlet openings extend from an outer surface ofthe annular section of the liner to the inner surface, and the one ormore outlet openings extend from a lower surface of the liner to theinner surface.
 15. A method of processing substrates, comprising:heating a substrate positioned on a substrate support in a processingvolume of a chamber; flowing one or more process gases over thesubstrate to form one or more layers on the substrate, the flowing ofthe one or more process gases over the substrate comprising guiding theone or more process gases between a plate and the substrate, the platesupported on a liner to divide the processing volume into a lowerportion and an upper portion; exhausting the one or more process gases;flowing one or more cleaning gases through the upper portion while theplate is supported on the liner, the upper portion being between theplate and a window; and exhausting the one or more cleaning gases. 16.The method of claim 15, further comprising flowing one or more purgegases through the upper portion simultaneously with the flowing of theone or more process gases over the substrate.
 17. The method of claim16, further comprising flowing one or more cleaning gases through thelower portion of the processing volume.
 18. The method of claim 17,wherein the one or more process gases flow through one or more firstinlet openings in fluid communication with the lower portion of theprocessing volume.
 19. The method of claim 18, wherein the one or morepurge gases flow through one or more second inlet openings in fluidcommunication with the upper portion of the processing volume.
 20. Themethod of claim 19, wherein the one or more second inlet openings areangularly offset from the one or more first inlet openings along acircumference of the chamber.